powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 1 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product 20v p - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) m ax i d m ax t c = + 25c - 2 0v 9.5m ? @ v gs = - 4 .5v - 4 2 a 1 2.5 m ? @ v gs = - 2.5 v description this mosfet is designed to minimize the on - state resistance (r ds (on) ), yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load s witch ? power management functions features ? low r ds(on) C e nsures o n s tate l osses a re m inimized ? small f orm f actor t hermally e fficient p ackage e nables h igher d ensity e nd p roducts ? occupies j ust 33% of t he b oard a rea o ccupied by so - 8 e nabling s maller e nd p roduct ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: powerdi ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p 2 0 10 u fg - 7 powerdi ? 3333 - 8 20 00 /tape & reel dm p 2 0 10 u fg - 13 powerdi ? 3333 - 8 3000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information bottom view equivalent circuit top view s 49 = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 5 = 201 5 ) ww = week code (01 to 53) powerdi ? 3333 - 8 s 49 y yww d s g s s s g d d d d pin 1
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 2 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 2 0 v gate - source voltage v gss 10 v continuous drain current , v gs = - 4.5 v (note 6 ) t a = + 25 c t c = + 25 c i d - 12 .7 - 4 2 a maximum continuous body diode f orward current (note 6 ) i s - 3 a pulsed drain current ( 380 s p ulse, d uty c ycle = 1% ) i dm - 80 a avalanche current , l=0.1mh (note 7 ) i a s - 35 a avalanche energy , l=0.1mh (note 7 ) e a s 64 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 0.9 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ? ja 136 c/w total power dissipation (note 6 ) p d 2.3 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ? ja 54 c/w thermal resistance, junction to case (note 6 ) r ? j c 4 operating and storage temperature range t j, t stg - 55 to +15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 2 0 v v gs = 0v, i d = - 1m a zero gate voltage drain current i dss - 1 a v ds = - 16 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 8 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) - 0.4 - 1.2 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) 9.5 m ? v gs = - 4.5 v, i d = - 3.6 a 1 2.5 v gs = - 2 .5 v, i d = - 3.6 a diode forward voltage v sd gs = 0v, i s = - 1 0 a dynamic characteristics (note 9 ) input capacitance c iss 3350 ds = - 10 v, v gs = 0v f = 1.0mhz output capacitance c oss 527 rss 460 g 10.7 ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge (v gs = - 4.5v) q g 50 ? ds = - 1 0 v, i d = - 3.6 a total gate charge (v gs = - 10v) q g 103 gs 6.0 gd 14.4 d( on ) 9.7 v dd = - 1 0 v, v gs = - 4.5 v, r g en = 4.7 , i d = - 3.6 a turn - on rise time t r 30 d( off ) 235 f 110 rr 64 f = - 3.6 a, di/dt = 10 0a/ s reverse recovery charge q rr 60 notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e as rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 3 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = - 1.2v v gs = - 1.5v v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 4.0v v gs = - 4.5v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5v - 55 25 85 150 125 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 3.6a 0 0.003 0.006 0.009 0.012 0.015 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = - 2.5v v gs = - 4.5v 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 5a v gs = - 2.5v, i d = - 5a 0 0.003 0.006 0.009 0.012 0.015 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = - 4.5v - 55 25 85 125 150
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 4 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product 0 0.005 0.01 0.015 0.02 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with junction temperature v gs = - 2.5v, i d = - 5a v gs = - 4.5v, i d = - 5a 0 0.2 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10. typical drain - source leakage current vs. voltage 25 85 125 150 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v, t j =85 v gs =0v, t j =150 v gs =0v, t j =125 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v gs (v) q g (nc) figure 12. gate charge v ds = - 10v, i d = - 3.6a 100 1000 10000 0 5 10 15 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c iss c oss c rss
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 5 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14. transient thermal resistance r ja (t)=r(t) * r ja r ja =136 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area t j(max) =150 t c =25 single pulse dut on 1*mrp board v gs = - 4.5 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 6 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi ? 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout p lease see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 x3 y3 x y c y1 y2 x1 x2 1 8 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x)
powerdi is a registered t rademark of diodes incorporated. dm p2010ufg document number: d s 37848 rev. 2 - 2 7 of 7 www.diodes.com september 2015 ? diodes incorporated d mp2010ufg advance information advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents und er the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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